8613853146766 # Experimental verification of the original design of the laminated busbar and the current design

##### Source：wenhui　　Date：2020-07-23 16:37

Experimental verification of the original design of the laminated busbar and the current design

In order to make an accurate horizontal comparison, we will absorb the power at both ends of the IGBT in the original design

After taking off, get the following: 1) Original design scheme The turn-off current and voltage waveforms at both ends of the IGBT are

Since the parasitic inductance of the DC-side capacitor is about 100nH, the inductance at the bolt pin is about 120nH,

The parasitic inductance of IGBT is about 20nH, and the total inductance of the busbar in the original design is about 760nH. Therefore,

The total line distribution inductance is about 1000nH.

In this case, according to formula (1), the induced voltage is:

ΔU=Ls*di/dt=1000x10-3x125/0.28≈446V

Where dt is the IGBT turn-off fall time (0.28μs), so that the total voltage across the IGBT is:

Ut=Ud+ΔU=800+446=1246V This is basically consistent with the actual measured value, therefore, the original design must add an absorption capacitor, and the IGBT

The rated voltage must be 1700V.

2) The current design scheme The turn-off current and voltage at both ends of the IGBT

Consistent with the above method, first calculate the total line distribution inductance Ls:

Ls=0.3+100+120+20=240.3nH

The stray inductance of the bus is 0.3nH.

The induced voltage across the IGBT is:

ΔU=Ls*di/dt=240.3x10-3x125/0.28≈107V

Where dt is the IGBT turn-off fall time (0.28μs), so that the total voltage across the IGBT is:

Ut=Ud+ΔU=800+107=907V

This is basically consistent with the actual measured value, therefore, the current design does not need to add the absorption capacitor, the amount of IGBT The constant voltage can choose 1200V level, which greatly reduces the probability of IGBT breakdown.